PM-1310-10G chip is used for optical phase modulation and spectral broadening. This device is composed of a high polarization extinction ratio polarizer and an integrated electro-optic phase modulator suitable for telecommunication applications. Based on Lithium Niobate (LiNbO3) material, PM-1310-10G is fabricated with waveguides using High Temperature Proton Exchange (HTPE), and group-velocity matched electrodes at high-frequency band. The PM-1310-10G provides highly reliable performance over wide temperature range and with extended life time in comparison with other competing technologies such as InP and silicon photonics.


  • 1310 ± 30 nm operation
  • EO bandwidth (-3dB) ≥ 10 GHz, Max. to 20 GHz
  • Insertion loss < 4.0 dB
  • Vπ (RF port, at 1 GHz) < 5 V
  • Polarizer-integrated, High-PER


  • Short/Long-haul communication
  • CWDM applications
  • Interferometric sensor
  • Phase-shifting key format
  • Spectral broadening, shifting, chirping
  • Laser phase modulation
  • Free-space optical communication (FSOC)


Application Diagram: