PM-1064-10G chip is used for optical signal phase modulation and spectral broadening. This device is composed of a high polarization extinction ratio polarizer and an electro-optic phase modulator suitable for use in high-power laser systems. Based on Lithium Niobate (LiNbO3) material, PM-1064-10G is fabricated with optical waveguides using High Temperature Proton Exchange (HTPE), and group-velocity matched electrodes in the high-frequency region. The PM-1064-10G provides highly reliable performance over wide temperature range and with extended life time in comparison with other competing technologies such as InP and silicon photonics.


  • 1064 ± 30 nm operation
  • EO bandwidth (-3dB) > 10 GHz, Max. to 20GHz
  • Insertion loss < 4.5 dB
  • Vπ (RF port, at 100 kHz) < 4 V
  • Polarizer-integrated
  • High Polarization Extinction Ratio > 60dB


  • High-power laser
  • Phase modulation
  • Frequency stabilization
  • Pound-Drever-Hall laser
  • Spectral broadening
  • Interferometric Sensor
  • Free-space optical communication (FSOC)


Application Diagram: