PM-1310-10G
Overview:
PM-1310-10G chip is used for optical phase modulation and spectral broadening. This device is composed of a high polarization extinction ratio polarizer and an integrated electro-optic phase modulator suitable for telecommunication applications. Based on Lithium Niobate (LiNbO3) material, PM-1310-10G is fabricated with waveguides using High Temperature Proton Exchange (HTPE), and group-velocity matched electrodes at high-frequency band. The PM-1310-10G provides highly reliable performance over wide temperature range and with extended life time in comparison with other competing technologies such as InP and silicon photonics.
Features:
- 1310 ± 30 nm operation
- EO bandwidth (-3dB) ≥ 10 GHz, Max. to 20 GHz
- Insertion loss < 4.0 dB
- Vπ (RF port, at 1 GHz) < 5 V
- Polarizer-integrated, High-PER
Applications:
- Short/Long-haul communication
- CWDM applications
- Interferometric sensor
- Phase-shifting key format
- Spectral broadening, shifting, chirping
- Laser phase modulation
- Free-space optical communication (FSOC)
Specifications:
Application Diagram:
